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PHE13005X
Silicon diffused power transistor
Rev. 02 -- 20 November 2009 Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated, NPN power switching transistor in a full pack plastic package for use in high frequency electronic lighting ballast applications
1.2 Features and benefits
Fast switching High voltage capability of 700 V Isolated package Low thermal resistance
1.3 Applications
Electronic lighting ballasts
1.4 Quick reference data
Table 1. IC Ptot VCESM Quick reference Conditions DC; see Figure 3, 1 and 2 Th 25 C; see Figure 4 VBE = 0 V Min Typ Max 4 26 700 Unit A W V collector current total power dissipation collector-emitter peak voltage DC current gain Symbol Parameter
Static characteristics hFE IC = 1 A; VCE = 5 V; Th = 25 C; see Figure 11 VCE = 5 V; IC = 2 A; Th = 25 C; see Figure 11 12 10 20 17 40 28
NXP Semiconductors
PHE13005X
Silicon diffused power transistor
2. Pinning information
Table 2. Pin 1 2 3 mb B C E n.c. Pinning information Symbol Description base collector emitter isolated
E
sym123
Simplified outline
mb
Graphic symbol
C B
123
SOT186A (TO-220F)
3. Ordering information
Table 3. Ordering information Package Name PHE13005X TO-220F Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" Version SOT186A Type number
PHE13005X_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 November 2009
2 of 13
NXP Semiconductors
PHE13005X
Silicon diffused power transistor
4. Limiting values
Table 4. Symbol VCESM VCBO VCEO IC ICM IB IBM Ptot Tstg Tj Limiting values Parameter collector-emitter peak voltage collector-base voltage collector-emitter voltage collector current peak collector current base current peak base current total power dissipation storage temperature junction temperature Th 25 C; see Figure 4 Conditions VBE = 0 V IE = 0 A IB = 0 A DC; see Figure 3, 1 and 2 Min -65 Max 700 700 400 4 8 2 4 26 150 150 Unit V V V A A A A W C C
In accordance with the Absolute Maximum Rating System (IEC 60134).
8 IC (A) 6
001aaf009
VCC LC
VBE = -5V 4 IBon VBB 2 LB
VCL(CE) probe point
DUT
001aab999
0 0 200 400 600 800 VCL(CE) (V)
Fig 1.
Reverse bias safe operating area
Fig 2.
Test circuit for reverse bias safe operating area
PHE13005X_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 November 2009
3 of 13
NXP Semiconductors
PHE13005X
Silicon diffused power transistor
102 IC (A) 10 ICM(max) IC(max)
(1)
001aai071
duty cycle = 0.01
(4)
tp = 20 s 50 s 100 s 200 s 500 s DC
1
(2)
10-1
10-2
(3) (5)
10-3 1 10
102 VCL(CE) (V)
103
Fig 3.
Forward bias safe operating area
120 Pder (%) 80
03aa13
40
0 0 50 100 150 Th (C) 200
Fig 4.
Normalized total power dissipation as a function of heatsink temperature
PHE13005X_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 November 2009
4 of 13
NXP Semiconductors
PHE13005X
Silicon diffused power transistor
5. Thermal characteristics
Table 5. Symbol Rth(j-h) Rth(j-a) Thermal characteristics Parameter Conditions Min Typ 55 Max 4.8 Unit K/W K/W thermal resistance from with heatsink compound; see Figure 5 junction to heatsink thermal resistance from junction to ambient
10 Zth(j-h) (K/W) 1
= 0.5
001aag169
0.2 0.1 0.05 0.02
P = tp 1/f
10-1
10-2
0
tp t 1/f
10-3 10-6 10-5 10-4 10-3 10-2 10-1
1
10 102 tp (s)
Fig 5.
Transient thermal impedance from junction to heatsink as a function of pulse duration
PHE13005X_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 November 2009
5 of 13
NXP Semiconductors
PHE13005X
Silicon diffused power transistor
6. Characteristics
Table 6. Symbol ICES ICBO ICEO IEBO VCEOsus VCEsat Characteristics Parameter Conditions Min 400 12 10 Typ 0.1 0.2 0.3 0.85 0.92 20 17 Max 1 5 1 0.1 1 0.5 0.6 1 1.2 1.6 40 28 Unit mA mA mA mA mA V V V V V V
Static characteristics collector-emitter cut-off VBE = 0 V; VCE = 700 V; Tj = 25 C current VBE = 0 V; VCE = 700 V; Tj = 100 C collector-base cut-off current VCB = 700 V; IE = 0 A; Th = 25 C
collector-emitter cut-off VCE = 400 V; IB = 0 A; Th = 25 C current emitter-base cut-off current collector-emitter sustaining voltage collector-emitter saturation voltage VEB = 9 V; IC = 0 A; Th = 25 C IB = 0 A; IC = 10 mA; LC = 25 mH; Th = 25 C; see Figure 6 and 7 IC = 1 A; IB = 0.2 A; Th = 25 C; see Figure 8 and 9 IC = 2 A; IB = 0.5 A; Th = 25 C; see Figure 8 and 9 IC = 4 A; IB = 1 A; Th = 25 C; see Figure 8 and 9
VBEsat
base-emitter saturation IC = 1 A; IB = 0.2 A; Th = 25 C; voltage see Figure 10 IC = 2 A; IB = 0.5 A; Th = 25 C; see Figure 10
hFE
DC current gain
IC = 1 A; VCE = 5 V; Th = 25 C; see Figure 11 IC = 2 A; VCE = 5 V; Th = 25 C; see Figure 11
Dynamic characteristics ts storage time IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; Th = 25 C; resistive load; see Figure 12 and 13 IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Th = 25 C; inductive load; see Figure 14 and 15 IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Th = 100 C; inductive load; see Figure 14 and 15 tf fall time IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; Th = 25 C; resistive load; see Figure 13 and 12 IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Th = 25 C; inductive load; see Figure 14 and 15 IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Th = 100 C; inductive load; see Figure 14 and 15 2.7 4 s
-
1.2
2
s
-
1.4
4
s
-
0.3
0.9
s
-
0.1
0.5
s
-
0.16
0.9
s
PHE13005X_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 November 2009
6 of 13
NXP Semiconductors
PHE13005X
Silicon diffused power transistor
IC (mA) 50 V 100 to 200 horizontal oscilloscope vertical 6V 300 30 Hz to 60 Hz
001aab987
250
100 1 10 0 min VCE (V) VCEOsus
001aab988
Fig 6.
Test circuit for collector-emitter sustaining voltage
2.0
003aad540
Fig 7.
Oscilloscope display for collector-emitter sustaining voltage test waveform
003aad542
VCEsat (V) 1.6
VCEsat (V) 1.0 IC = 1 A 2A 3A 4A 0.8
1.2 0.6 0.8
0.4
0.4
0.2
0 10-2
10-1
1 IB (A)
10
0 10-1
1 IC (A)
10
Fig 8.
Collector-emitter saturation voltage; typical values
Fig 9.
Collector-emitter saturation voltage as a function of collector current; typical values
PHE13005X_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 November 2009
7 of 13
NXP Semiconductors
PHE13005X
Silicon diffused power transistor
1.4 VBEsat (V) 1.2 1.0 0.8
003aad541
102
003aad539
hFE VCE = 5 V 1V 10 0.6 0.4 0.2 0 10-1 1 10-2
1 IC (A)
10
10-1
1 IC (A)
10
Fig 10. Base-emitter saturation voltage; typical values
IC 90 % ICon 90 %
Fig 11. DC current gain as a function of collector current; typical values
VCC
RL 10 % t tf IB ton ts toff IBon 10 % t tr 30 ns -IBoff
001aab990
VIM 0 tp T
RB DUT
001aab989
Fig 12. Switching times waveforms for resistive load
Fig 13. Test circuit for resistive load switching
PHE13005X_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 November 2009
8 of 13
NXP Semiconductors
PHE13005X
Silicon diffused power transistor
IC ICon 90 % VCC
LC 10 % tf IB ts toff IBon t t LB DUT
IBon VBB
001aab991
-IBoff
001aab992
Fig 14. Switching times waveforms for inductive load
Fig 15. Test circuit for inductive load switching
7. Isolation characteristics
Table 7. Symbol Visol(RMS) Isolation characteristics Parameter RMS isolation voltage Conditions 50 Hz f 60 Hz; RH 65 %; Th = 25 C; from all terminals to external heatsink; clean and dust free from collector to external heatsink; f = 1 MHz; Th = 25 C Min Typ Max 2500 Unit V
Cisol
isolation capacitance
-
10
-
pF
PHE13005X_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 November 2009
9 of 13
NXP Semiconductors
PHE13005X
Silicon diffused power transistor
8. Package outline
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
E P q D1 T mounting base
A A1
D
j L2 b1 L b2 L1 K Q
1
2
b e e1
3
wM c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.1 0.9 b2 1.4 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.5 6.3 E 10.3 9.7 e 2.54 e1 5.08 j 2.7 1.7 K 0.6 0.4 L L1 L2 max. 3
(1)
P 3.2 3.0
Q 2.6 2.3
q 3.0 2.6
T
(2)
w 0.4
14.4 3.30 13.5 2.79
2.5
Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are 2.5 x 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC 3-lead TO-220F JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14
Fig 16. Package outline SOT186A (TO-220F)
PHE13005X_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 November 2009
10 of 13
NXP Semiconductors
PHE13005X
Silicon diffused power transistor
9. Revision history
Table 8. Revision history Release date 20091120 Data sheet status Product data sheet Product data sheet Change notice Supersedes PHE13005X_1 Document ID PHE13005X_2 Modifications: PHE13005X_1
*
Various changes to content.
20080515
PHE13005X_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 November 2009
11 of 13
NXP Semiconductors
PHE13005X
Silicon diffused power transistor
10. Legal information
10.1 Data sheet status
Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
10.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
11. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PHE13005X_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 November 2009
12 of 13
NXP Semiconductors
PHE13005X
Silicon diffused power transistor
12. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Isolation characteristics . . . . . . . . . . . . . . . . . . .9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 November 2009 Document identifier: PHE13005X_2

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